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Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru
2009-08-10
[Electronic ed.]
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Universitätsbibliothek Chemnitz
Universitätsbibliothek Chemnitz, Chemnitz
Fakultät für Elektrotechnik und Informationstechnik
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Copper films with a thickness in the nanometer
range are required as seed layers for the
electrochemical Cu deposition to form multilevel
interconnects in ultralarge-scale
integrated (ULSI) electronic devices.
Continuously shrinking device dimensions and
increasing aspect ratios of the dual-damascene
structures in the copper-based metallization
schemes put ever more stringent requirements on
the films with respect to their conformality in
nanostructures and thickness homogeneity across
large wafers. Due to its intrinsic self-limiting
film growth characteristic, atomic layer
deposition (ALD) appears
appropriate for
homogeneously coating complex substrates and to
replace conventional physical vapor deposition
(PVD) methods beyond the 32 nm technology node.
To overcome issues of direct Cu ALD, such as
film agglomeration at higher temperatures or
reduced step coverage in plasma-based processes,
an
ALD copper oxide film may be grown under mild
processing conditions, while a subsequent
reduction
step converts it to metallic copper. In this
poster, which was presented at the AVS 9th
International Conference on Atomic Layer
Deposition (ALD 2009), held in Monterey,
California from
19 to 22 July 2009, we
report detailed film growth studies of ALD
copper
oxide in the self-limiting regime on SiO2, TaN
and Ru. Applications in subsequent
electrochemical deposition processes are
discussed, comparing Cu plating results on
as-deposited
PVD Ru as well as with PVD and reduced ALD Cu
seed layer.
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Dielektrische Funktion
Dünne Schicht
Ellipsometrie
Galvanische Abscheidung
Kupfer
Kupferoxide
Metallisierungsschicht
Reduktion <Chemie>
Ruthenium
Siliciumdioxid
Tantalnitride
ULSI
Verkupferung
Atomic Layer Deposition (ALD)
Copper
Copper oxide
Dielectric function
Electroplating
Ellipsometry
Metallization
Reduction
Silicon oxide
Tantalum nitride
Thin film
urn:nbn:de:bsz:ch1-200901295
Technische Universität Chemnitz
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Technische Universität Chemnitz, Chemnitz
Fraunhofer ENAS
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Fraunhofer ENAS, Chemnitz
American Vacuum Society (AVS)
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American Vacuum Society (AVS), Chemnitz
Thomas
Waechtler
aut
Steffen
Schulze
aut
Lutz
Hofmann
aut
Sascha
Hermann
aut
Nina
Roth
aut
Stefan E.
Schulz
aut
Thomas
Gessner
aut
Heinrich
Lang
aut
Michael
Hietschold
aut
eng
http://www.ald-avs.org/
URL
AVS 9th International Conference on Atomic Layer Deposition (ALD 2009), Monterey, CA (USA), July 19-22, 2009
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