ubc eng ALD of Copper and Copper Oxide Thin Films For Applications in Metallization Systems of ULSI Devices ALD von Kupfer- und Kupferoxid-Dünnschichten für Anwendungen in Metallisierungssystemen von ULSI-Bauelementen urn:nbn:de:bsz:ch1-200800914 published born digital aut Thomas Waechtler aut Steffen Oswald aut Nina Roth aut Heinrich Lang aut Stefan E. Schulz aut Thomas Gessner pbl Technische Universität Chemnitz Technische Universität Chemnitz, Chemnitz Institut für Chemie Fakultät für Elektrotechnik und Informationstechnik pbl Leibniz-Institut für Festkörper- und Werkstoffforschung (IFW), Dresden Leibniz-Institut für Festkörper- und Werkstoffforschung (IFW), Dresden, Chemnitz pbl Fraunhofer-Einrichtung für Elektronische Nanosysteme (ENAS), Chemnitz Fraunhofer-Einrichtung für Elektronische Nanosysteme (ENAS), Chemnitz, Chemnitz pbl American Vacuum Society (AVS) American Vacuum Society (AVS), Chemnitz nBu₃P)₂Cu(acac)] precursor and wet O₂. The precursor is of particular interest as it is a liquid at room temperature and thus easier to handle than frequently utilized solids such as Cu(acac)₂, Cu(hfac)₂ or Cu(thd)₂. Furthermore the substance is non-fluorinated, which helps avoiding a major source of adhesion issues repeatedly observed in Cu CVD. As result of the ALD experiments, we obtained composites of metallic and oxidized Cu on Ta and TaN, which was determined by angle-resolved XPS analyses. While smooth, adherent films were grown on TaN in an ALD window up to about 130°C, cluster-formation due to self-decomposition of the precursor was observed on Ta. We also recognized a considerable dependency of the growth on the degree of nitridation of the TaN. In contrast, smooth films could be grown up to 130°C on SiO₂and Ru, although in the latter case the ALD window only extends to about 120°C. To apply the ALD films as seed layers in subsequent electroplating processes, several reduction processes are under investigation. Thermal and plasma-assisted hydrogen treatments are studied, as well as thermal treatments in vapors of isopropanol, formic acid, and aldehydes. So far these attempts were most promising using formic acid at temperatures between 100 and 120°C, also offering the benefit of avoiding agglomeration of the very thin ALD films on Ta and TaN. In this respect, the process sequence shows potential for depositing ultra-thin, smooth Cu films at temperatures below 150°C.]]> ALD Atomic Layer Deposition Atomlagenabscheidung Bis(tri-n-butylphosphan)kupfer(I)acetylacetonat 540 620 660 Ameisensäure Dampfdruck Integrierte Schaltung Kupfer Kupferoxide Metallisieren Metallisierungsschicht Metallorganische Verbindungen Ruthenium Röntgen-Photoelektronenspektroskopie Sauerstoff Silicium Siliciumdioxid Tantal Tantalnitride ULSI Verkupferung Wasserdampf 2008-07-15 Universitätsbibliothek Chemnitz 5018951-7 prv Universitätsbibliothek Chemnitz, Chemnitz URL http://www.ald-avs.org Blumtritt ute.blumtritt@bibliothek.tu-chemnitz.de lecture UBC-20-213