ubc Evaluation of Phosphite and Phosphane Stabilized Copper(I) Trifluoroacetates as Precursors for the Metal-Organic Chemical Vapor Deposition of Copper 2006-03-16 [Electronic ed.] prv Universitätsbibliothek Chemnitz Universitätsbibliothek Chemnitz, Chemnitz Fakultät für Elektrotechnik und Informationstechnik nBu₃P)₃CuO₂CCF₃. Solutions of this precursor with acetonitrile and isopropanol were used for deposition experiments on 100 mm Si wafers sputter-coated with Cu, Cu/TiN, and Al(2 % Si)/W. Experiments were carried out in a cold-wall reactor at a pressure of 0.7 mbar, using a liquid delivery approach for precursor dosage. On Cu seed layers, continuous films were obtained at low deposition rates (0.5 to 1 nm/min). At temperatures above 320°C, hole formation in the Cu films was observed. Deposition on TiN led to the formation of single copper particles and etching of the TiN, whereas isolating aluminum oxyfluoride was formed after deposition on Al(Si)/W. It is concluded that the formation of CF₃ radicals during decarboxylation has a negative effect on the deposition results. Furthermore, the precursor chemistry needs to be improved for a higher volatility of the complex.]]> 620 CVD-Verfahren Kupfer Metallisieren ULSI Decarboxylierung Kupfer(I)-Carboxylat urn:nbn:de:swb:ch1-200600315 Technische Universität Chemnitz pbl Technische Universität Chemnitz, Chemnitz Thomas Waechtler aut Yingzhong Shen aut Alexander Jakob aut Ramona Ecke aut Stefan E. Schulz aut Lars Wittenbecher aut Hans-Josef Sterzel aut Kristin Tiefensee aut Steffen Oswald aut Steffen Schulze aut Heinrich Lang aut Michael Hietschold aut Thomas Gessner aut eng http://www.mam-conference.org/ URL Poster presentation; Materials for Advanced Metallization Conference (MAM 2006), 6 to 8 March 2006, Grenoble, France born digital lecture